As data center power consumption increases dramatically, the industry is in urgent need of power semiconductors that can efficiently convert power. This demand growth is partly to reduce operating costs and partly to reduce greenhouse gas emissions to achieve the goal of net zero emissions. In addition, the industry is constantly pursuing lower-cost and smaller power systems.

The STL7DN6LF3 from STMicroelectronics is an N-channel power MOSFET designed for high-performance, low-power applications. It is commonly used in motor drives, automotive active suspension systems, and can also be used in other power control circuits, such as power management circuits, DC-DC converters, etc.

The issues discussed in this article involve the application of parallel MOSFETs in high-power, high-frequency switches; by debugging PCB traces and important circuit parameters, the causes of voltage and current imbalance problems on parallel drive MOSFETs circuits are studied;

The STW68N65DM6-4AG is an automotive-grade N-channel MDmesh™ power MOSFET introduced by STMicroelectronics that meets the AEC-Q101 standard. It is suitable for a variety of automotive electronic systems such as automotive power management and electric power steering.

Both IGBTs and MOSFETs are important semiconductor devices that are widely used in power electronics, switching power supplies, and other high-power control systems. They can both be used to control the flow of current, but their operating principles, characteristics, and application scenarios differ.